Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations

Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations

Hideo Namatsu, Yasuo Takahashi, Kenji Yamazaki et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 286 citations

Engineering, Materials Engineering, Materials Science +11

Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors

Vassilios Constantoudis, G. P. Patsis, Angeliki Tserepi · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 107 citations

Engineering, Vision Science, Digital Imaging +16

Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films

Toru Yamaguchi, Hideo Namatsu, Masao Nagase et al. · Applied Physics Letters · 1997 · 105 citations

Natural Sciences, Materials Engineering, Materials Science +17

Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography

Geoffrey W. Reynolds, James W. Taylor · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 96 citations

Engineering, Materials Engineering, Materials Science +13

Resist line edge roughness and aerial image contrast

J. Shin, Geng Han, Yuling Ma et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 89 citations

Natural Sciences, Materials Engineering, Materials Science +17