K-Edge XANES of GaP, InP and GaSb

Abstract

X-ray-absorption near-edge structure (XANES) spectra for crystalline GaP, InP and GaSb were measured for each Ga and P K-edge region. Full multiple scattering calculations are performed. The information on the charge distribution around the X-ray-absorbing atom can be obtained by comparing the experimental XANES spectra with the full multiple scattering calculations. The effective cation charge distributions are predicted to be q = ∼0.33 for GaP, q =0.42 ∼0.5 for InP and q \lesssim0.26 for GaSb.