Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance

Abstract

Contactless electroreflectance is applied to study direct optical transitions from the heavy hole, light hole, and spin-orbit split-off band to the conduction band in compressively strained Ge1−xSnx layers of various Sn concentrations at room temperature. It is shown that the energies of these transitions are in very good agreement with theoretical predictions, which take into account non-linear variation of bandgap and spin-orbit splitting plus the strain-related shifts obtained from the Bir-Pikus theory. The bowing parameter for the direct bandgap has been determined to be 1.8 ± 0.2 eV and agree with this one obtained within ab initio calculations, which is 1.97 eV (for indirect bandgap the bowing parameter is 0.26 eV).