P. Scharoch

The electronic band structure of Ge_1−<i>x</i>Sn_<i>x</i>in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect

Maciej P. Polak, P. Scharoch, R. Kudrawiec · Journal of Physics D Applied Physics · 2017 · 108 citations

Engineering, Gaps Regimes, Physics +11

First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data

Maciej P. Polak, P. Scharoch, R. Kudrawiec · Semiconductor Science and Technology · 2015 · 97 citations

First-principles Calculations, Engineering, Chemical Trends +17

Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

Filip Dybała, Maciej P. Polak, Jan Kopaczek et al. · Scientific Reports · 2016 · 67 citations · Full text

Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells

R. Kudrawiec, Jan Kopaczek, Maciej P. Polak et al. · Journal of Applied Physics · 2014 · 59 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +16

Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2

Jan Kopaczek, Maciej P. Polak, P. Scharoch et al. · Journal of Applied Physics · 2016 · 58 citations

Optical Materials, Brillouin Zone, Engineering +17