The electronic band structure of Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub>in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect - Concepedia

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The electronic band structure of Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub>in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect

108

Citations

58

References

2017

Year

Maciej P. Polak, P. Scharoch, R. Kudrawiec

Journal of Physics D Applied Physics

EngineeringGaps RegimesPhysicsNatural SciencesApplied PhysicsQuantum MaterialsCondensed Matter PhysicsAtomic PhysicsSemiconductor MaterialChemistryBand OffsetsElectronic StructureSolid-state PhysicFull Composition Range

References

	Year	Citations

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