Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices

Abstract

We proposed a device for observing hot electron interference by a double slit. For this purpose we had refined and improved the fabrication techniques, especially electron beam lithography; the alignment of electron beam lithography before and after crystal growth with accuracy of 100nm was reported for the first time. We could form detection electrodes of fine pitch on a narrow mesa structure. The formation of a 50-nm-pitch InP buried structure was also reported.