Physical Review Letters · 1999 · 44 citations · 25 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsRadiation DetectionRadiation MeasurementHighly Charged IonsIon ImplantationSemiconductor DetectorsEnergy DepositionEnergy Deposition MeasurementIon Implantation EffectsSilicon
We have measured the deposition of potential energy of slow $(\ensuremath{\sim}6\ifmmode\times\else\texttimes\fi{}{10}^{5}\mathrm{m}/\mathrm{s})$, highly charged ions in solids with an ion implanted silicon detector. A large fraction (about $35%$ or 60 keV) of the potential energy dissipated by ${\mathrm{Au}}^{69+}$ ions can be traced in electronic excitations deep $(>50\mathrm{nm})$ inside the solid. In contrast, only about $10%$ of the potential energy has been accounted for in measurements of emitted secondary particles.
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X-Ray Fluorescence Yields, Auger, and Coster-Kronig Transition Probabilities
W. Bambynek, Bernd Crasemann, R.W. Fink et al. · Reviews of Modern Physics · 1972 · 1.9K citations
Interaction of slow multicharged ions with solid surfaces
A. Arnau, F. Aumayr, P. M. Échenique et al. · Surface Science Reports · 1997 · 362 citations
Natural Sciences, Chemistry, Physics +12