Zn-Doped Gallium Nitride Nanotubes with Zigzag Morphology

Abstract

Zn-doped gallium nitride (GaN) nanotubes with zigzag morphology have been synthesized by a chemical vapor deposition method. A single-crystalline zigzag nanotube consists of two building blocks with equivalent growth directions, hexagonal cross sections, and about 10 nm wall thicknesses. The formation of the nanotube is attributed to the reduction of electrostatic interaction energy caused by the polar side surfaces of GaN. A room temperature photoluminescence spectrum of Zn-doped GaN nanotubes with zigzag morphology shows two peaks at 2.97 and 2.16 eV, respectively.