Publication | Closed Access
InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices
34
Citations
10
References
2000
Year
PhotonicsElectrical EngineeringEngineeringPhysicsSemiconductor LasersApplied PhysicsLaser ApplicationsLaser MaterialIngaasn/gaas HeterostructuresLaser MaterialsMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsCompound SemiconductorMaterial Growth
We report on the growth and properties of InGaAsN/GaAs heterostructures and on their applications for lasers emitting at λ≈1.3 µm. Material growth was performed by molecular beam epitaxy using an RF plasma source.
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