Japanese Journal of Applied Physics · 1989 · 14 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCrystal ChemistryDopingSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsCharged Particle Activation AnalysisCzochralski Crystal GrowthOxygen Vacancy ChemistryOxygen-doped CarbonSingle-crystal Growth
Carbon, boron and oxygen in liquid-encapsulated Czochralski(LEC) semi-insulating GaAs crystals grown in three different ambiences (Ar, Ar+1% O 2 , and Ar+1% CO) were analyzed by charged particle activation analysis (CPAA) using the 12 C(d, n) 13 N, nat B(d, xn) 11 C, and 16 O( 3 He, p) 18 F reactions. An addition of 1% O 2 or CO gas to a conventional Ar ambience during crystal growth was found to increase C contamination by a factor of up to 35 (1.8× 10 16 cm -3 ), while B and O concentrations remained unchanged for the most part.
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