Publication | Open Access
Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films
85
Citations
22
References
2015
Year
Spin TorqueMagnetic PropertiesEngineeringSpin-charge ConversionSpintronic MaterialMagnetic MaterialsPerpendicular Exchange BiasMagnetoresistanceMagnetismFerroelectric ApplicationQuantum MaterialsMagnetoelectric SwitchingMagnetic Thin FilmsMaterials ScienceCoherent RotationLow-dimensional SystemsMagnetic MaterialMagnetoelectric MaterialsSpintronicsFerromagnetismNatural SciencesApplied PhysicsCondensed Matter PhysicsThin FilmsThreshold Electric FieldFunctional Materials
We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.
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