Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

Semiconductors, Semiconductor Technology, Engineering +4

Kinetics and Kinematics for Translational Motions in Microgravity During Parabolic Flight

Leia Stirling, Karen Willcox, Philip Ferguson et al. · Aviation Space and Environmental Medicine · 2009 · 5.3K citations

Proposal for strained type II superlattice infrared detectors

D. L. Smith, C. Mailhiot · Journal of Applied Physics · 1987 · 706 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe et al. · Applied Physics Letters · 2011 · 299 citations

Ii-vi Semiconductor, Photonics, Photoluminescence +14

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

B. V. Olson, Eric A. Shaner, J. K. Kim et al. · Applied Physics Letters · 2012 · 211 citations

Optical Materials, Engineering, Optical Transmission System +17