High-power output in Pb1−<i>x</i>Sn<i>x</i>Te diode lasers with improved mirror quality

Abstract

Pb1−xSnxTe diode lasers with cw output power over 10 mW, single-longitudinal-mode power up to 6 mW, and incremental external quantum efficiencies up to 0.16 have been obtained using polished rather than cleaved end mirrors. The results indicate that one of the major factors limiting the output power and external efficiency of these lasers is the optical quality of the mirrors.