Applied Physics Letters · 1999 · 19 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportElectron TransportElectronic Transport ModelingSemiconducting MaterialsSemiconductor PhysicsSemiconductor Thin FilmsCarrier Transport In SemiconductorsCarrier Transport MechanismsConductionConduction BandElectrical Transport PropertiesElectron Transport In SemiconductorsField EmissionTransport In Semiconductors
A theoretical examination of field emission from the conduction band of a semiconducting substrate is reported. The analysis includes a comparison with Fowler–Nordheim theory, and it is concluded that the formalism of the Fowler–Nordheim theory is incorrect when applied to carriers originating from a semiconducting substrate. The use of a Fowler–Nordheim analysis results in an error in the extraction of the barrier height that is dependent upon the applied electric field across the oxide, conduction band offset, and temperature. A lower limit of the error was calculated to be between 5% and 15%. An analytical expression is developed to describe the field emission of electrons from the conduction band of a semiconductor.
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Fowler-Nordheim Tunneling into Thermally Grown SiO2
M. Lenzlinger, E. H. Snow · Journal of Applied Physics · 1969 · 1.7K citations