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Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics
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1998
Year
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Materials ScienceMaterials EngineeringElectrical EngineeringDielectricsBond-pad DamageEngineeringDamage MechanismApplied PhysicsIntermetal Dielectric StacksTime-dependent Dielectric BreakdownMetal GridsDielectric StackElectronic PackagingMicroelectronicsElectrical PropertyElectrical Insulation
A new bond failure mechanism related to the new, mechanically weak, low-k dielectrics in intermetal dielectric stacks is presented. Mechanical reinforcement of the dielectric stack through the use of metal grids is demonstrated to be effective to prevent this damage. Possible failure mechanisms are discussed.