Japanese Journal of Applied Physics · 2008 · 110 citations · 3 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsNanotechnologyHigh-temperature MaterialsMetalsNanocompositesNanoparticle SurfacesSemiconductor Device MaterialsWafer BondingBondingBonding Temperature EffectsHigh-temperature StabilitySilicon CarbideSilicon Carbide (Sic) Materials
We investigated a new bonding technique utilizing nano-scaled particles for use in high-temperature environments. The results of our investigations revealed that the method could be used to form bonds by simultaneously applying heat and pressure. Moreover, compared to a conventional Pb–5Sn-solder bond, a nanoparticle-based bond suffered no degradation in bonding strength over an elevated-temperature holding period of 1000 h at 250 °C, and its discharge characteristics were improved (i.e., increased) threefold. It is possible to extend this bonding technique to mounting components in devices that operate in high-temperature environments, e.g., it can be used to mount components such as silicon carbide (SiC) devices, which are expected to be applied in environments with temperatures exceeding 250 °C.
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Small particle melting of pure metals
G.L. Allen, R. A. Bayles, W.W. Gile et al. · Thin Solid Films · 1986 · 451 citations
Nanoparticulate materials densification
Joanna R. Groza, Robert J. Dowding · Nanostructured Materials · 1996 · 168 citations