Journal of Applied Physics · 1990 · 11 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOpticsOptoelectronicsPhotonicsIntegrated OpticsIntegrated PhotonicsOptical SourcesOptical WaveguidesPhotonic Integrated CircuitsSemiconductor LasersCoupling CoefficientIntegrated LasersIntegrated Optical WaveguidesIntegrated Semiconductor LasersIntegrated WaveguidesMetalorganic Vapor Phase EpitaxyPeriodic StructureWaveguide Lasers
A monolithic integration between an active and an external passive waveguide in such a way they are directly butt-jointed in a single epitaxial step is demonstrated in the InP system. The growth behavior during nonplanar metalorganic vapor-phase epitaxy on a patterned InP substrate was investigated by using a periodic structure on GaInAs or InGaAsP/InP layers. A 1.5-mm-long ridge laser consisting of an active guide butt-jointed to a transparent waveguide has exhibited lasing oscillation at 1.5 μm with a threshold current of 82 mA. A coupling coefficient of 60% has been experimentally measured.
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