Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source - Concepedia

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Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source

37

Citations

11

References

1981

Year

Chun‐Yen Chang, Y.K. Su, M.K. Lee, Liang‐Gee Chen, Mau‐Phon Houng

Journal of Crystal Growth

Materials EngineeringIi-vi SemiconductorElectrical EngineeringEngineeringApplied PhysicsFaas Epitaxial LayersLow Pressure MovpeMolecular Beam EpitaxyEpitaxial GrowthGa Source

References

	Year	Citations

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