Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System

Abstract

epitaxial layers with low electron concentrations were obtained from an alkylgallium and arsine system by use of triethylgallium. The highest Hall mobility of the layer, with an electron concentration of at 77°K was 120,000 cm2/V sec. Carrier concentration and carrier type of the layer could be changed in the range of from 1012 to ∼ 1016/cm3 by changing the arsine to triethyl gallium mole ratio introduced into a deposition zone. This fact was expected to be due to the amphoteric impurity sharing between the arsenic and the gallium sites of crystal.