Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Patrick Waltereit, O. Brandt, A. Trampert et al. · Nature · 2000 · 1.7K citations

Semiconductors, White Oled, Electrical Engineering +10

Energetics and electronic structure of stacking faults in AlN, GaN, and InN

Catherine Stampfl, Chris G. Van de Walle · Physical review. B, Condensed matter · 1998 · 327 citations

Materials Science, Aluminium Nitride, Electrical Engineering +15

Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

K. Hiramatsu, K. Nishiyama, Atsushi Motogaito et al. · physica status solidi (a) · 1999 · 283 citations

Materials Science, Epitaxial Growth, Elo Gan +14

High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

Mathew C. Schmidt, Kwang-Choong Kim, Hitoshi Sato et al. · Japanese Journal of Applied Physics · 2007 · 251 citations

Engineering, C-plane Device Growth, Optoelectronic Devices +18

Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Mathew C. Schmidt, Kwang-Choong Kim, Robert M. Farrell et al. · Japanese Journal of Applied Physics · 2007 · 217 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +11