Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine

Abstract

We have successfully deposited SiNx:H films at temperatures as low as 350°C by the chemical-vapor-deposition (CVD) method using hexachloro-disilane (Si 2 Cl 6 ) and hydrazine (N 2 H 4 ). The atomic ratio (N/Si) of the film deposited at 400°C was 1.26 with a total hydrogen content of about 30 at.%. The breakdown-field strength was 5.3 MV/cm at a leakage-current density of 1 µA/cm 2 , and the low-field resistivity was more than 10 15 Ω·cm. Amorphous-silicon thin-film transistors equipped with this film as the gate dielectric showed clear transfer characteristics.