The deposition of platinum‐containing tin oxide thin films by metal‐organic CVD

Abstract

The metal oxide semiconductor SnO 2 has a range of important applications, such as in transparent and conducting coatings on glass, and in gas‐sensing devices. CVD has a number of advantages as the technique of choice for the deposition of SnO 2 thin films but development has in the past been hampered by the high toxicity of the available precursors and the necessity of adding an oxidant such as O 2 or H 2 O. Here, SnO 2 deposition from the relatively non‐toxic tetra‐ t ‐butoxide tin in the absence of added oxidant is reported. Platinum doping of the material is also discussed.