Electronics Letters · 1996 · 53 citations · 7 references
EngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser MaterialMid-infrared Laser TechnologyHigh-power LasersOptical AmplifierSemiconductor LasersOptical PropertiesCharacteristic TemperatureAmbient-temperature OperationInfrared OpticOptical PumpingPhotonicsPhysicsLaser MaterialsRoom TemperatureLaser EmissionApplied PhysicsOptoelectronicsLasers
Laser emission at λ = 3.2 µm has been observed for temperatures up to 350 K in pulsed optical pumping experiments on type-II quantum well lasers with four-constituents in each period (InAs-Ga0.7In0.3Sb-InAs-AlSb). The characteristic temperature is 68 K, and peak output powers of up to 270 mW are obtained for ambient-temperature operation.
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Type-II quantum-well lasers for the mid-wavelength infrared
J. R. Meyer, C. A. Hoffman, F. J. Bartoli et al. · Applied Physics Letters · 1995 · 423 citations
Auger lifetime enhancement in InAs–Ga1−<i>x</i>In<i>x</i>Sb superlattices
E. R. Youngdale, J. R. Meyer, C. A. Hoffman et al. · Applied Physics Letters · 1994 · 289 citations
Type II mid-infrared quantum well lasers
J. I. Malin, J. R. Meyer, Christian Félix et al. · Applied Physics Letters · 1996 · 80 citations