Electron-Bombardment Damage in Silicon

Abstract

The nature of 1-Mev electron-bombardment damage in silicon is investigated by using Hall effect, conductivity, and carrier-lifetime measurements. It is shown that the bombardment imperfections consist of sites containing at least two electrically active point defects. The connection between these sites and the energy levels in the forbidden gap found in an earlier investigation is established. The state of charge, the electron and hole-capture cross sections, and the temperature dependence of the energy levels of these imperfections are obtained.