Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon

Abstract

The lifetimes of excitons bound to neutral donors in GaP and Si were measured to be much shorter at low temperatures than predicted from absorption measurements. An Auger recombination process in which one bound electron recombines with the bound hole while exciting the second bound electron into the conduction band is believed to predominate over radiative recombination.