Development of microcracks in hydrogen-implanted silicon substrates

Abstract

The development of microcracks in hydrogen-implanted silicon has been studied up to the final split using optical microscopy and mass spectroscopy. It is shown that the amount of gas released when splitting the material is proportional to the surface area of microcracks. This observation is interpreted as a signature of a vertical collection of the available gas. The development of microcracks is modeled taking into account both diffusion and mechanical crack propagation. The model reproduces many experimental observations such as the dependence of split time upon temperature and implanted dose.