Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric - Concepedia

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Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

14

Citations

10

References

2004

Year

Ting Hui Ng, V. Ho, L.W. Teo, M. Tay, Benjamin Koh, W. K. Chim, W. K. Choi, An Du, C. H. Tung

Thin Solid Films

Materials ScienceElectrical EngineeringEngineeringTunneling MicroscopyNanoelectronicsNanotechnologyApplied PhysicsMemory DeviceTunnel DielectricSemiconductor MemoryMicroelectronicsPhase Change MemoryHafnium Dioxide

References

	Year	Citations

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