The electrical behavior of GaAs-insulator interfaces: A discrete energy interface state model

Abstract

The relationship between the electrical behavior of GaAs Metal Insulator Semiconductor (MIS) structures and the high density discrete energy interface states (0.7 and 0.9 eV below the conduction band) was investigated utilizing photo- and thermal emission from the interface states in conjunction with capacitance measurements. It was found that all essential features of the anomalous behavior of GaAs MIS structures, such as the frequency dispersion and the C–V hysteresis, can be explained on the basis of nonequilibrium charging and discharging of the high density discrete energy interface states.