Short Channel Effects in MOS-Transistors

Abstract

Metal gate MOS-transistors with channel lengths down to approximately 0.5 μm and with gate oxide thicknesses of 19 nm and 34 nm have been fabricated and evaluated. For devices shorter than 1 μm we have found significant short channel effects on threshold voltage, transconductance and subthreshold current. The experimental results have been compared with computer model calculations. A good agreement between measured and calculated values was found regarding the geometry dependence.