Hybrid Field-Effect Transistor Based on a Low-Temperature Melt-Processed Channel Layer

Abstract

Melt-processed organic–inorganic perovskite channel layers (see Figure) are demonstrated in field-effect transistors fabricated on both silicon and polyimide substrates. Linear and saturation regime field-effect mobilities for the melt-processed devices are enhanced relative to the values achieved for analogous spin-coated devices due, at least in part, to the improved grain structure of the melt-processed films.