Journal of Applied Physics · 1974 · 20 citations · 5 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsSolid State PhysicsCrystal ChemistryDefects In Electronic MaterialsElectrical ConductivityWide-bandgap SemiconductorsDoping Effects On Electrical PropertiesElectrical PropertiesElectrical Properties AnalysisHeat Treatment EffectsResistivityResistivity Measurement
Results of Hall-effect and resistivity measurements on semi-insulating undoped AgGaS2 are reported. Both shallow (∼0.11 eV) and deep (∼0.72 eV) acceptor levels were observed from p-type crystals. Crystal resistance is not readily changed by heat treatment.
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G. D. Boyd, H. M. Kasper, J. H. McFee · IEEE Journal of Quantum Electronics · 1971 · 462 citations
Sharp-line and broad-band emission in AgGaS2 crystals
Phil Won Yu, Y. S. Park · Journal of Applied Physics · 1974 · 36 citations
Direct measurement of the birefringence of AgGaS2
Craig P. Schwartz, D. S. Chemla, Bernard Ayrault et al. · Optics Communications · 1972 · 24 citations