Dopant profile control and metrology requirements for sub-0.5 μm metal–oxide–semiconductor field-effect transistors

Abstract

Simulation is used to explore the sensitivity of device characteristics to variations in dopant profiles for modern metal–oxide–semiconductor field-effect transistors. These sensitivities place stringent requirements on the allowable variation in dopant profiles and on their metrology. The role of profile characterization and simulation in technology development is also discussed.