Photoresponse properties of large-area MoS2 atomic layer synthesized by vapor phase deposition

Abstract

Photoresponse properties of a large area MoS2 atomic layer synthesized by vapor phase deposition method without any catalyst are studied. Scanning electron microscopy, atomic force microscopy, Raman spectrum, and photoluminescence spectrum characterizations confirm that the two-dimensional microstructures of MoS2 atomic layer are of high quality. Photoelectrical results indicate that the as-prepared MoS2 devices have an excellent sensitivity and a good reproducibility as a photodetector, which is proposed to be ascribed to the potential-assisted charge separation mechanism.