Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging

Abstract

We report on the formation, motion, and concentration of localized green emission centers along partial dislocations (PDs) bounding recombination-induced stacking faults (RISFs) in 4H-SiC pin diodes. Electroluminescence imaging depicted the motion of these green emitting point defects during forward bias operation along carbon-core PDs that bound the RISFs. Following high temperature annealing, these green emitting point defects did not contract with the PDs, but remained in the final location during the expansion. This implies that the motion of these green emitting point dislocations is enabled through a recombination-enhanced motion, similar to the process for RISF expansion and contraction within SiC.