Band alignments and quantum confinement in (111) GaAsN/InAs strain-balanced nanostructures

Abstract

An eight-band Kane Hamiltonian modified for the strain has been used to describe the electronic states of the highly strained zincblende GaAs1−xNx. Conduction and valence band offsets of GaAs1−xNx with respect to InAs on InP(111) have also been investigated for different nitrogen (N) concentrations. A critical concentration of N is found, which marks the onset of type-I to type-II band alignment for GaAs1−xNx/InAs on InP(111). The effect of nitrogen on the conduction band of GaAs1−xNx has been described by the band anticrossing model. The strain balanced InAs /GaAs1−xNx short period superlattice on InP is predicted to reach operating wavelengths beyond .