600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$

Abstract

Blocking characteristics of diamond junction field-effect transistors were evaluated at room temperature (RT) and 200 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C. A high source-drain bias (breakdown voltage) of 566 V was recorded at RT, whereas it increased to 608 V at 200 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C. The positive temperature coefficient of the breakdown voltage indicates the avalanche breakdown of the device. We found that the breakdown occurred at the drain edge of the p-n junction between p-channel and the n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -gates. All four devices measured in this letter showed a maximum gate-drain bias over 500 V at RT and 600 V at 200 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C.