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GaAs-InSb <i>n-n</i> HETEROJUNCTION: A SINGLE-CRYSTAL ``SCHOTTKY'' BARRIER
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Citations
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References
1965
Year
SemiconductorsExperimental Nuclear PhysicsApril 1965PhysicsR. H. RedikerEngineeringNatural SciencesJournal Citation ReportApplied PhysicsQuantum MaterialsD. K. JadusBibliometricsScience And Technology StudiesOptoelectronic DevicesCitation AnalysisCrystallographyCompound SemiconductorNuclear Astrophysics
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation E. D. Hinkley, R. H. Rediker, D. K. Jadus; GaAs‐InSb n‐n HETEROJUNCTION: A SINGLE‐CRYSTAL ``SCHOTTKY'' BARRIER. Appl. Phys. Lett. 1 April 1965; 6 (7): 144–146. https://doi.org/10.1063/1.1754207 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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