Field emission from porous (100) GaP with modified morphology

Abstract

Morphology of n-type porous GaP samples with (100) crystal orientation was modified by postchemical etching for field-emitter application. The structures produced have uniform size and shape distribution and are found to show good emission characteristics. The mechanism of the morphology modification is explained, and a strong correlation between field-emission characteristics and postchemical etching time is shown.