Small-signal model with frequency-independent elements for the avalanche region of a microwave negative-resistance diode

Abstract

An experimentally derived four-element incremental model for the avalanche region of a microwave negative-resistance diode and a simplified measuring procedure for determining the element values are presented. The element values depend on bias but not on frequency. The four-element model predicts the same frequency behavior as the theoretically derived Gilden-Hines model when one degree of freedom is eliminated. Comparison with theory predicts a simple low-frequency (1-MHz) indirect measurement of device drift region carrier transit time.