Journal of The Electrochemical Society · 1978 · 11 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingPhotovoltaic MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSolar Cell MaterialsSolar CellsHeterojunction Solar CellsHeterojunctionsHeterostructure Solar CellsOhmic ConductionOhmic ContactsScatteringSemiconductor HeterojunctionsSolar Cell Fabrication
Polycrystalline heterojunction material of N-AIAs/p-GaAs and P-AlAs/ n-GaAs was grown in a chloride arsine vapor-phase reactor on graphite substrates.P +A1As/p-n GaAs structures were produced as well by postgrowth Zn diffusion.Control of nucleation and ohmic contact of the GaAs layer to the graphite was achieved with Zn doping during growth, or Ge or Sn coating of the substrate prior to growth, for p-or n-type GaAs, respectively.The N-A1As/p-GaAs material appears promising for possible solar cell applications, but we have not succeeded in overcoming the high spreading resistance due to grain boundary scattering in the AlAs layer.