Concepedia

The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current–voltage–temperature (I–V–T) characteristics

Barış Kınacı, Saime Şebnem Çetin, Aylin Bengi, Süleyman Özçelik

Materials Science in Semiconductor Processing · 2012 · 43 citations · 60 references

DOI

Concepts

References

60

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

, , +17

A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance

H. Norde · Journal of Applied Physics · 1979 · 1.5K citations

, , +14

Recent advances in Schottky barrier concepts

R. T. Tung · Materials Science and Engineering R Reports · 2001 · 1.2K citations

, , +9

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations

TiO2 thin films by a novel sol–gel processing for gas sensor applications

C. Garzella, Elisabetta Comini, E. Tempesti et al. · Sensors and Actuators B Chemical · 2000 · 364 citations

, , +16