The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe

Abstract

The experimental results are presented of a study of new extended defects morphology in Si. It is shown that the defects generated by moving 60°-dislocation lie in the dislocation slip plane. 〈110〉 and 〈112〉 axes of the defects are found and {113} and {115} habit planes are supposed. It is assumed that the peculiarities of the atomic structure of split 60°-dislocations are the source of local supersaturation of intrinsic point defects, mainly self-interstitials, which results in the formation of their agglomerates in the form of extended defects with specific crystallography. The defects were revealed also in SiGe crystals and in this way this phenomenon is supposed to generally exist for materials with diamond crystal lattice. The cardinal influence of Ge content on the defects nucleation proves the supposition about their self-interstitial nature.