Ultra-high current gain InGaAsP/InP heterojunction bipolar transistor

Abstract

A maximum DC current gain of 112000 was obtained by a double-layer base HBT with a thin base layer of 0.1 μm thickness. A breakdown voltage with a common-emmitter configuration was found to be 1.3 V, which is smaller than for conventional HBTs owing to the ultrahigh current gain and a carrier multiplication at a base-collector junction.