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Characterization and Enhancement of High-Voltage Cascode GaN Devices
113
Citations
12
References
2014
Year
Electrical EngineeringEngineeringRf SemiconductorPower DeviceCascode Gan SwitchPackage Parasitic InductancePower Semiconductor DeviceAluminum Gallium NitrideGan Power DevicePower ElectronicsMicroelectronicsGallium Nitride
Gallium nitride (GaN) devices are gathering momentum, with a number of recent market introductions for a wide range of applications such as point-of-load converters, OFF-line switching power supplies, battery chargers, and motor drives. This paper studies the basic characteristics of a 600 V cascode GaN switch, such as voltage distribution during the turn-ON and turn-OFF transition. The switching loss mechanism of the cascode GaN switch is analyzed in detail, including the impact of the package parasitic inductance in both hard- and soft-switching modes. A soft-switching 5 MHz boost converter is developed and shows the advantages and the potential of the cascode GaN.
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