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Segregation of Arsenic to the Grain Boundaries in Polycrystalline Silicon
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1980
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Materials ScienceEngineeringCrystalline DefectsPhysicsSurface ScienceApplied PhysicsPolycrystalline Silicon FilmsIntrinsic ImpurityPolycrystalline SiliconIon Back‐scatteringSemiconductor MaterialSemiconductor Device FabricationThin FilmsArsenic DistributionAmorphous SolidSilicon On InsulatorMicrostructureThin Film Processing
The arsenic distribution in polycrystalline silicon films deposited on single crystal silicon and on oxide, was measured using 2.2 MeV, 4He+ ion back‐scattering, after various high temperature annealing steps. Pile up of arsenic was observed at the interfaces of the deposited films. This can be interpreted in terms of a model based on segregation of arsenic to the grain boundaries in the films.