SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV - Concepedia

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SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV

23

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3

References

2006

Year

M. Juhel, F. Laugier, D. Delille, C. Wyon, L.F.Tz. Kwakman, M. Hopstaken

Applied Surface Science

Semiconductor TechnologyEngineeringPhysicsApplied PhysicsSims Depth ProfilingOblique O2+MicroelectronicsSemiconductor Device

References

	Year	Citations

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