Unstable resonator cavity semiconductor lasers

Abstract

GaAs heterostructure lasers with unstable resonator cavities were demonstrated for the first time with both curved mirrors fabricated by etching. Typical output powers of 0.35 W were observed in a stable, highly coherent lateral mode. The laser operated stably in a single longitudinal mode over a large range of injection currents. The external quantum efficiency was 70% of that of a similar laser with both mirror facets cleaved implying good output coupling of the energy from the entire region.