J. Salzman

Gain mechanism in GaN Schottky ultraviolet detectors

Or Katz, V. Garber, B. Meyler et al. · Applied Physics Letters · 2001 · 303 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Ion‐Beam‐Assisted Lift‐Off Technique for Three‐Dimensional Micromachining of Freestanding Single‐Crystal Diamond

P. Olivero, Sergey Rubanov, P. Reichart et al. · Advanced Materials · 2005 · 178 citations

Engineering, Mechanical Engineering, Microactuator +18

Yellow luminescence and related deep levels in unintentionally doped GaN films

Ilan Shalish, Leeor Kronik, Gil Segal et al. · Physical review. B, Condensed matter · 1999 · 149 citations

Deep Acceptor Level, Electrical Engineering, Solid-state Lighting +15

Properties of carbon-doped GaN

H. Tang, J. B. Webb, J. A. Bardwell et al. · Applied Physics Letters · 2001 · 148 citations

Materials Science, Semiconductors, Electrical Engineering +14

Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

Or Katz, G. Bahir, J. Salzman · Applied Physics Letters · 2004 · 119 citations

Wide-bandgap Semiconductor, Gan-based Schottky Detectors, Engineering +16