Physical Review · 1963 · 31 citations · 14 references
Natural SciencesMaterials SciencePhysicsMaterials PhysicsSemiconductor MaterialsSurface ScienceSemiconductor SurfacesSurface CharacterizationSurface ChargeSurface Chemistry Of SolidsSurface EnergySurface PhysicsDirac Surface StatesFermi FunctionFermi LevelFermi SurfaceSurface Electronic StructureSurface StatesValence BandValence Band Structure
The channel technique has been successfully applied to measurement of the properties of cleaved germanium surfaces. A clean germanium surface is highly $p$ type with the Fermi level near the valence band at the surface. This is brought about by acceptor-like surface states close to the edge of the valence band with a density of at least 1.5\ifmmode\times\else\texttimes\fi{}${10}^{12}$/${\mathrm{cm}}^{2}$. The density of these low-lying surface states decreases when the surface is exposed to oxygen. A comparison is made between results on cleaved surfaces and surfaces cleaned by ion bombardment.
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Cleaning of Silicon Surfaces by Heating in High Vacuum
F. G. Allen, Joseph Eisinger, H. D. Hagstrum et al. · Journal of Applied Physics · 1959 · 96 citations
Natural Sciences, Materials Engineering, Materials Science +17
Surface States on Silicon and Germanium Surfaces
H. Statz, G. A. deMars, Luke M. Davis et al. · Physical Review · 1956 · 94 citations
Natural Sciences, Materials Engineering, Materials Science +17