High electron mobility transistors based on the AlN/GaN heterojunction - Concepedia

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High electron mobility transistors based on the AlN/GaN heterojunction

35

Citations

12

References

2009

Year

A. Adikimenakis, K. E. Aretouli, E. Iliopoulos, A. Kostopoulos, K. Tsagaraki, G. Konstantinidis, A. Georgakilas

Microelectronic Engineering

Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceAln/gan Heterojunction

References

	Year	Citations

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